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MMBTSA1980W
PNP Silicon Epitaxial Planar Transistor
for general small signal amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb = 25 OC Parameter DC Current Gain at -VCE = 6 V, -IC = 2 mA Current Gain Group O Y G L Symbol hFE hFE hFE hFE -V(BR)CBO -V(BR)CEO -V(BR)EBO -ICBO -IEBO -VCE(sat) fT COB NF Min. 70 120 200 300 50 50 5 80 Max. 140 240 400 700 0.1 0.1 0.3 7 10 Unit V V V A A V MHz pF dB Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 50 50 5 150 200 150 -55 +150 Unit V V V mA mW
O
C C
O
Collector Base Breakdown Voltage at -IC = 100 A Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 10 A Collector Cutoff Current at -VCB = 50 V Emitter Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Transition Frequency at -VCE = 10 V, -IC = 1 mA Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Noise Figure at -VCE = 6 V, -IC = 0.1 mA,tf = 1 KHz, RG = 10 K
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 30/03/2006
MMBTSA1980W
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 30/03/2006

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